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| 激光辐照加工的硅氧化结构的受激发光(英文) | |
| 引用本文： | 黄伟其,金峰,王海旭,刘世荣,秦朝建,秦水介,胡林.激光辐照加工的硅氧化结构的受激发光(英文)[J].贵州科学,2008,26(1):1-5. |
| 作者姓名： | 黄伟其 金峰 王海旭 刘世荣 秦朝建 秦水介 胡林 |
| 作者单位： | 1. 贵州大学理学院,贵阳,550025;贵州教育学院物理系,贵阳,550003 2. 贵州大学理学院,贵阳,550025 3. 中国科学院地球化学研究所,贵阳,550003 |
| 摘 要： | 我们用1064nm脉冲激光在硅表面加工出小孔结构,再作高温退火处理形成硅氧化纳米结构,发现该结构在692和694nm波长处有很强的光致受激发光(PL).通过进一步实验发现:该PL发光有明显的阈值表现和光泵线性增强效应,证明该PL发光确实是光致受激辐射.我们提出氧化界面态模型来解释光致受激发光机理,在氧化界面态与价带顶空穴态之间形成粒子数反转.这项工作为硅基上发光器件的光电子集成研发开辟了新的途经. |
| 关 键 词： | 激光辐照 受激发光 氧化 硅界面态 laser irradiation stimulated emission oxide structure of silicon interface state |
| 文章编号： | 1003-6563（2008）01-0001-05 |
| 收稿时间： | 2007-09-17 |
| 修稿时间： | 2007年9月17日 |
STIMULATED EMISSION IN OXIDE STRUCTURE OF SILICON FORMED BY IRRADIATION OF LASER |
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| HUANG Wei-Qi,JIN Feng,WANG Hai-Xu,LIU Shi-rong,QIN Chao-jian,QIN Shui-Jie,HU Lin.STIMULATED EMISSION IN OXIDE STRUCTURE OF SILICON FORMED BY IRRADIATION OF LASER[J].Guizhou Science,2008,26(1):1-5. | |
| Authors: | HUANG Wei-Qi JIN Feng WANG Hai-Xu LIU Shi-rong QIN Chao-jian QIN Shui-Jie HU Lin |
| Institution: | 1.Department of Physics;Guizhou University;Guiyang 550025;2.Institute of Geochemistry;Chinese Academy of Sciences;Guiyang 550003;3.Department of Physics;Guizhou Educational College;Guiyang 550003 |
| Abstract: | Stimulated emission has been observed from some oxide structure of silicon when optically excited by radiation of 514nm laser. A sharp peak at 694nm and another one at 692nm are dominated by stimulated emission which can be demonstrated by its threshold behavior and linear transition of emission intensity as a function of pump power in larger range. The oxide structure was fabricated by laser irradiation and annealing treatment of silicon. A model for explaining the stimulated emission is proposed in which the trap states of the interface between some oxide of silicon and porous nanocrystal play an important role. |
| Keywords: | laser irradiation stimulated emission oxide structure of silicon interface state |
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