| 金刚石薄膜/立方氮化硼异质结的制备 |
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| 引用本文： | 杨洁,张航,王成新,刘洪武,李迅.金刚石薄膜/立方氮化硼异质结的制备[J].吉林大学学报(理学版),2000(2):65-67. |
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| 作者姓名： | 杨洁 张航 王成新 刘洪武 李迅 |
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| 作者单位： | 1. 长春86003部队实验室,长春,130022
2. 吉林大学原子与分子物理研究所,超硬材料国家重点实验室,长春,130023 |
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| 摘 要： | 利用高温高压合成的立方氮化硼单晶材料，采用恒浓度高温扩散方法制备n型立方氮化硼半导体材料。通过化学气相沉积方法在n型立方氮化硼上外延生长p型金刚石薄膜。在此基础上，通过欧姆接触电极的制作，制备出金刚石薄膜／立方氮化硼异质pn结，并给出pn结的伏安特性曲线。
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| 关 键 词： | 金刚石薄膜 立方氮化硼 异质 pn 结 伏安特性 |
| 文章编号： | 0529-0279(2000)02-0065-03 |
| 修稿时间： | 1999-12-02 |
Preparation of the Hetero-Junction of Diamond and Cubic Boron Nitride |
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| YANG Jie,ZHANG Hang,WANG Cheng-xin,LIU Hong-wu,LI Xun.Preparation of the Hetero-Junction of Diamond and Cubic Boron Nitride[J].Journal of Jilin University: Sci Ed,2000(2):65-67. |
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| Authors: | YANG Jie ZHANG Hang WANG Cheng-xin LIU Hong-wu LI Xun |
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| Abstract: | The preparation of the hetero junction of diamond and cubic boron nitride is reported in this paper. The cubic boron crystal was synthesized by the high temperature and high pressure method. n type cubic boron nitride was made by the constant concentration diffusion method in a vacuum chamber at a high temperature. p type diamond film was grown on the n type cubic boron nitride surface epitaxially by chemical vapor depositon. Omic contacting electrode was made on both the surfaces of the pn junction. The I V detected result shows that the pn junction of diamond and cubic boron nitride has well defined nonlinear I V characteristics as normal pn junction. |
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| Keywords: | diamond-filmt cubic boron nitride pn junction I-V characteristics |
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