基底温度对氮化硼薄膜场发射特性的影响

利用射频磁控溅射方法， 真空室中充入高纯N_{2(99.99%)和高纯Ar（99.99%）的混合气体， 在n型（100）Si基底上沉积了六角氮化硼（h-BN）薄膜. 在超高真空（<10^-7 Pa）系统中测量了BN薄膜的场发射特性， 发现 沉积时基底温度对BN薄膜的场发射特性有很大影响. 基底温度为500 ℃时沉积的BN薄膜样品场发射特性要好于其他薄膜， 阈值电场为12 V/μm， 电场升到34 V/μm， 场发射电流为280 μA/cm². 所有样品的Fowler-Nordheim(F-N)曲线均近似为直线， 表明电子是通过 隧道效应穿透BN薄膜发射到真空的.}

Influence of substrates temperature on field emission characteristics of BN thin films

H-BN thin films were prepared on the (100)-oriented surface of n-Si by r.f. sputtering physical vapor deposition(PVD). The field emission characteristics of the BN films were measured in a ultra high vacuum syste m. It has been found that the field emission characteristics of BN films is affe cted evidently by substrates temperature. A turn-on electric field as low as 12 V/μm is obtained and the highest emission current density is 280 μA/cm^{2< /sup> fo r the BN film deposited at a substrate temperature of 500 ℃. The Fowler-Nordhei m(F-N) curves are all nearly straight lines that indicate the electrons are emi tted from n-Si to penetrate the BN films to vacuum tunneling by means of tunnel ing effect.}