| 半导体器件模拟中的散射机制 |
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| 引用本文： | 张子砚,吴广国. 半导体器件模拟中的散射机制[J]. 贵州大学学报(自然科学版), 2004, 21(4): 360-364 |
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| 作者姓名： | 张子砚 吴广国 |
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| 作者单位： | 贵州大学,电子科学系,贵州,贵阳,550025;贵州大学,电子科学系,贵州,贵阳,550025 |
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| 摘 要： | 从量子力学的微挠理论角度分析散射机制的基本理论，总结了半导体中几种重要的散射机制并给出了散射率的一般表达式，给出一具体的例子，分析了Si中的散射机制，用蒙特卡罗方法模拟了Si中的各种散射机制的散射率和其中载流子的运动状态。
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| 关 键 词： | 散射机制 微挠理论 散射率 蒙特卡罗方法 |
| 文章编号： | 1000-5269(2004)04-0360-05 |
| 修稿时间： | 2004-09-22 |
Scattering mechanism in the device simulation of thesemiconductor |
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| Zhang Zi-yan,Wu Guang-guo. Scattering mechanism in the device simulation of thesemiconductor[J]. Journal of Guizhou University(Natural Science), 2004, 21(4): 360-364 |
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| Authors: | Zhang Zi-yan Wu Guang-guo |
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| Abstract: | Aufhor have analyzed the basic theories of the scattering mechanism in terms of winding the theory a little of quantum mechanics and have summarized several kinds of important scattering mechanisms in the semiconductor and then provided the general expression formula of the scattering rate. At the end of the article, we cited a concrete example and analyzed the scattering mechanism in Si, and we also simulated the various scattering rates and the state of carriers through Monte Carlo method. |
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| Keywords: | scattering mechanism the theory of micro-disturbance scattering rate Monte Carlo method |
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