| 高温化学气相沉积法生长碳化硅晶体(HTCVD) |
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| 引用本文： | 韩栋梁.高温化学气相沉积法生长碳化硅晶体(HTCVD)[J].科技情报开发与经济,2009,19(4). |
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| 作者姓名： | 韩栋梁 |
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| 作者单位： | 中国电子科技集团公司第二研究所,山西,太原,030024 |
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| 基金项目： | 中国电子科技集团公司创新基金 |
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| 摘 要： | 研究了SiC晶体高温化学气相沉积生长机理,从Sic晶体高温化学气相沉积生长过程的化学原理、反应条件、反应过程、一般工艺等方面进行探讨,并分析了沉积温度、气体压力、本底真空及各反应气体分压(配比)对SiC单晶生长及其缺陷形成的影响,基于以上分析,得出高温化学气相沉积法生长碳化硅晶体最佳的工艺条件.
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| 关 键 词： | 碳化硅晶体 HTCVD法 晶体生长 |
Growth of SiC Crystal by High Temperature Chemical Vaporous Deposition(HTCVD) |
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| HAN Dong-liang.Growth of SiC Crystal by High Temperature Chemical Vaporous Deposition(HTCVD)[J].Sci-Tech Information Development & Economy,2009,19(4). |
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| Authors: | HAN Dong-liang |
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| Abstract: | This paper studies the mechanism of the growth of SiC crystal by HTCVD, discusses its chemical reaction principles, reaction conditions, reaction process and general technology, analyzes the effects of the deposition temperature gases pressure, base vacuum and gas reaction proportion for SiC crystal growth as well as the defects, and based on the above researches, obtains the best technological condition for SiC crystal growth with HTCVD. |
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| Keywords: | SiC crystal HTCVD crystal growth |
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