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| 最小二乘拟合计算有机薄膜晶体管阈值电压的研究 | |
| 引用本文： | 陈跃宁,徐征,路亚群,陈卓.最小二乘拟合计算有机薄膜晶体管阈值电压的研究[J].辽宁大学学报(自然科学版),2012,39(2):131-135. |
| 作者姓名： | 陈跃宁 徐征 路亚群 陈卓 |
| 作者单位： | 1. 北京交通大学光电子技术研究所,北京交通大学发光与光信息技术教育部重点实验室,北京100044;辽宁大学物理学院,辽宁沈阳110036 2. 北京交通大学光电子技术研究所,北京交通大学发光与光信息技术教育部重点实验室,北京100044 3. 辽宁大学物理学院,辽宁沈阳,110036 |
| 摘 要： | 通过制备了一个基于并五笨为有源层的顶栅底接触OTFT器件获取电流电压实验数据,并运用电流电压特性曲线理论拟合计算方法计算其阈值电压.研究发现,采用不同的拟合方法得到的阈值电压值有较大的差异.若选取转移特性曲线线性区距中心1/2范围内测试点进行最小二乘拟合计算出的阈值电压能减少采用其他拟合方法的固有不准确性,而且与其他方法得到阈值电压最接近. |
| 关 键 词： | 最小二乘拟合 阈值电压 有机薄膜晶体管 |
Research on Least- squares Fitting Calculation of the Threshold Voltage |
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| CHEN Yue-ning , XU Zheng , LU Ya-quan , CHEN Zhuo.Research on Least- squares Fitting Calculation of the Threshold Voltage[J].Journal of Liaoning University(Natural Sciences Edition),2012,39(2):131-135. | |
| Authors: | CHEN Yue-ning XU Zheng LU Ya-quan CHEN Zhuo |
| Institution: | 1.Institute of Optoelectronics Technology,Beijing Jiaotong University,Key Laboratory of Luminescence and Optical Information,Beijing Jiaotong University,Ministry of Education,Beijing 100044,China; 2.Physics Department,Liaoning University,Shenyang 110036,China) |
| Abstract: | In this article,organic thin-film transistors（OTFTs） with top-gate and bottom contact geometry based on pentacene as active layer were fabricated.The experimental data of the I-V were obtained from the organic thin-film transistors.The threshold voltage of the OTFT was calculated by fitting of theoretical calculation to the experimental data.We find that threshold voltage values have great difference by different fitting methods.We calculate the threshold voltage by least-squares fitting method to the experimental data of the I-V away from the center of the linear region of the transfer characteristics curves 1 / 2 range.The inherent inaccuracy of other fitting method can be reduced.The results is the nearest threshold voltage obtained with other methods. |
| Keywords: | least-squares fitting threshold voltage organic thin-film transistor |
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