| 氮气氛直拉硅中氧沉淀的研究 |
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| 引用本文： | 佘思明,廖平婴,彭世宽,李立本. 氮气氛直拉硅中氧沉淀的研究[J]. 中南大学学报(自然科学版), 1993, 0(2) |
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| 作者姓名： | 佘思明 廖平婴 彭世宽 李立本 |
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| 作者单位： | 中南工业大学，中南工业大学，中南工业大学，浙江大学 |
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| 基金项目： | 浙江大学高纯硅及硅烷国家重点实验室资助 |
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| 摘 要： | 用傅里叶红外光谱、透射电镜和化学腐蚀研究了氮气氛直拉硅(NCZSi)中的氧沉淀。结果指出,原生NCZSi中存在氧对-硅-氧复合物;N集中于氧沉淀的中心区域;N参子的中心区域表现出热稳定性。文中还提出了关于NCZSi中氧沉淀形核和生长途径的假设。
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| 关 键 词： | 直拉硅 氧沉淀 缺陷 |
INVESTIGATION ON OXYGEN PRECIPITATION IN NCZSi |
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| She Siming,Liao Pingying,Peng Shikuan Central South University of TechnologyLi Liben Zhejiang University. INVESTIGATION ON OXYGEN PRECIPITATION IN NCZSi[J]. Journal of Central South University:Science and Technology, 1993, 0(2) |
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| Authors: | She Siming Liao Pingying Peng Shikuan Central South University of TechnologyLi Liben Zhejiang University |
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| Affiliation: | She Siming;Liao Pingying;Peng Shikuan Central South University of TechnologyLi Liben Zhejiang University |
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| Abstract: | The oxygen precipitation in NCZSi has been investigated in this paper by means ofFTIR,TEMand WE etc.The experimental results indicate that there are Np-Si-O complexesin as-grown NCZSi and that the N atoms gather around the centers of oxygen precipitates.These N-participates centers show thermal stability.Hypotheses concerning the nucleationand growth of oxygen precipitates in NCZSi are also suggested in this paper. |
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| Keywords: | CZSi oxygen precipitation defect |
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