| 一类半导体方程组整体弱解的存在性 |
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| 引用本文： | 孙福芹. 一类半导体方程组整体弱解的存在性[J]. 天津师范大学学报(自然科学版), 2005, 25(2): 50-53 |
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| 作者姓名： | 孙福芹 |
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| 作者单位： | 天津工程师范学院,数理与信息科学系,天津,300222 |
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| 基金项目： | 教育部科技基金资助重点项目(104090) |
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| 摘 要： | 考虑一类半导体方程组的混合初边值问题。利用正则化算子和逼近过程，通过一系列先验估计，在迁移率既不为常数，又不满足速度饱和的条件下，证明了其整体弱解的存在性．
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| 关 键 词： | 半导体方程 混合边值 整体弱解 正则化算子 |
| 文章编号： | 1671-1114(2005)02-0050-04 |
| 修稿时间： | 2004-09-25 |
Existence of Global Weak Solutions to a Class of Semiconductor Equations |
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| SUN Fu-qin. Existence of Global Weak Solutions to a Class of Semiconductor Equations[J]. Journal of Tianjin Normal University(Natural Science Edition), 2005, 25(2): 50-53 |
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| Authors: | SUN Fu-qin |
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| Abstract: | Some mixed initial boundary value problems of the semiconductor equations were studied. Using the regularization operator and approach process and a series of prior estimates, the existence of the global weak solutions was proved under the conditions that the mobility neither equals to a constant nor satisfies velocity saturation. |
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| Keywords: | semiconductor equation mixed boundary value global solution regularization operator |
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