| 半导体PN结光电成像 |
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| 引用本文： | 郭亮,谢云.半导体PN结光电成像[J].应用科学学报,1994,12(4):379-386. |
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| 作者姓名： | 郭亮 谢云 |
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| 作者单位： | 南京大学，江苏劳动保护研究所 |
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| 基金项目： | 工业部基础技术研究基金 |
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| 摘 要： | 该文描述半导体ＰＮ结，在不同偏置电压下，受强度调制光照射时，产生的光生电压的测量结果，并对ＰＮ结进行了静态（非工作状态）和动态（外加工作电压）光电成像。从理论上探讨了ＰＮ结光电成像的物理机制，得到了ＰＮ结光电成像的一般规律，由此为集成电路等半导体器件进行静态或动态光电成像检测及分析提供依据。
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| 关 键 词： | 半导体 光电效应 光电成像 P－N结 |
PHOTOELECTREC IMAGING OF SEMICONDUCTOR P-N JUNCTIONS |
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| GUO LIANG ZHANG ZHONGNING ZHANG SHUYI.PHOTOELECTREC IMAGING OF SEMICONDUCTOR P-N JUNCTIONS[J].Journal of Applied Sciences,1994,12(4):379-386. |
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| Authors: | GUO LIANG ZHANG ZHONGNING ZHANG SHUYI |
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| Institution: | GUO LIANG ZHANG ZHONGNING ZHANG SHUYI(Nanjing University)XIE YUN (Jiangsu Institute of Labour Protection) |
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| Abstract: | The results of the photovoltaic detection of P-N junctions with different biasvoltages under the illumination of periodically modulated laser are presented inexperiment and theory. The static and dynamic photovoltaic images ofsemiconductor P-N junction devices are obtained by photoelectric microscopy.The studies of the phybsical mechanism of the photovoltaic detection of semicon-ductor P-N junctions provide effectively the analytical foundations of the staticand dynamic photovoltaic images of integrated circuits. |
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| Keywords: | semiconduetor P-N junctions photoelectric effect photoelectic imaging |
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