| 用于空间半导体区熔生长仿真系统的数学模型 |
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| 引用本文： | 朱振和.用于空间半导体区熔生长仿真系统的数学模型[J].中央民族大学学报(自然科学版),2004,13(1):5-13. |
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| 作者姓名： | 朱振和 |
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| 作者单位： | 中央民族大学,物理与电子工程系,北京,100081 |
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| 摘 要： | 本文提出一个晶体区熔生长的数学模型,可以根据炉管上十个热电偶的温度值计算出试样中的温场,再进一步计算出熔区位置、熔区宽度、生长界面的形状、生长速率和生长界面处的温度梯度等.材料科学家根据上述参数,可实时监控晶体的生长.
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| 关 键 词： | 晶体的区熔生长 数学仿真 实时显示 实时监控 |
| 文章编号： | 1005-8036(2004)01-0005-09 |
A Mathematical Model Used in the Emulation System for Bridgman Growth of Semiconductor Crystal in Space |
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| ZHU,Zhen-he.A Mathematical Model Used in the Emulation System for Bridgman Growth of Semiconductor Crystal in Space[J].Journal of The Central University for Nationalities(Natural Sciences Edition),2004,13(1):5-13. |
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| Authors: | ZHU Zhen-he |
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| Abstract: | A mathematical model of Bridgman crystal growth is presented, in which the temperature field in the experimental sample can be calculated from the values of temperature measured by ten thermocouples placed on the oven tube. Furthermore, the position and the width of the melting zone, the shape of the crystal growth face, the crystal growth rate and the gradient of temperature at the crystal growth face can be calculated in the model. According to the above parameters, the material scientist may execute the real_time control of the crystal growth in space. |
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| Keywords: | Bridgman growth of crystal mathematical emulation real-time display real-time control |
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