嵌入SiO2薄膜中的GeO和Ge纳米晶光致发光的研究

作者通过离子注入法得到了镶嵌于SiO2薄膜中的Ge纳米晶，并通过系统的氧化性或还原性退火处理，以改变样品中Ge的氧化物成分组成．分析了不同样品在室温下的光致发光(PL)特性，并结合XRD分析表明：300与400nm附近的荧光峰的发光机制是GeO(nc-GeO)纳米晶发光，而不是GeO的缺陷发光；570nm附近的荧光峰的发光机制为Ge纳米晶(nc-Ge)发光，而不是Ge及Si界面的缺陷发光．

Investigation on the Luminescence Mechanism of Nanocrystalline Ge and Nanocrystalline GeO Embedded in SiO2 Film

The luminescence mechanisms of nanocrystalline Ge and GeO embedded in SiO2 film have been investigated. The samples of Ge nanocrystals embedded in SiO2 films were prepared by Ge-ion implantation. The compositions of Ge and Ge oxide in samples were changed by systematically oxidation annealing or deoxidization annealing. The existence phases of Ge and Ge oxide and corresponding property of luminescence were measured by means of XRD and PL. The results suggest that the luminescence mechanism of luminescence peak at 300nm and 400nm is not due to the GeO defect luminescence but to the nanocrystalline GeO itself, and the luminescence mechanism of luminescence peak at 570nm does not result from defect luminescence of Ge and Si but from the nanocrystalline Ge (nc-Ge) itself.