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镁掺杂钛酸锶铅钡薄膜的介电调谐性能研究
引用本文:杨英,孙小华,李修能,侯爽. 镁掺杂钛酸锶铅钡薄膜的介电调谐性能研究[J]. 三峡大学学报(自然科学版), 2012, 34(6): 89-92
作者姓名:杨英  孙小华  李修能  侯爽
作者单位:三峡大学机械与材料学院,湖北宜昌,443002
基金项目:国家自然科学基金项目,湖北省教育厅项目
摘    要:采用Sol-Gel法在Pt/Ti/SiO2/Si衬底上制备出未掺杂和掺杂Mg的(Ba0.5Sr0.5)0.85Pb0.15-TiO3薄膜.采用XRD、SEM和Agilent 4294A精密阻抗分析仪研究了Mg掺杂量对薄膜的结晶性,表面形貌和介电性能的影响.结果表明:随着Mg掺杂量的增加,PBST薄膜的介电常数减小,介电损耗降低,介电调谐量先减少后增加.当Mg掺杂量为0.8mol%时,PBST薄膜具有最大的优值因子.

关 键 词:钛酸锶铅钡  镁掺杂  溶胶凝胶  介电性能

Dielectric and Tunable Properties of Mg-doped PBST Thin Films
Yang Ying , Sun Xiaohua , Li Xiuneng , Hou Shuang. Dielectric and Tunable Properties of Mg-doped PBST Thin Films[J]. Journal of China Three Gorges University(Natural Sciences), 2012, 34(6): 89-92
Authors:Yang Ying    Sun Xiaohua    Li Xiuneng    Hou Shuang
Affiliation:Yang Ying Sun Xiaohua Li Xiuneng Hou Shuang(College of Mechanical & Material Engineering,China Three Gorges Univ.,Yichang 443002,China)
Abstract:(Ba0.5Sr0. 5)0.85Pb0.15TiO3 thin films doped by x(Mg)=0-0.8 mol% were fabricated by Sol-Gel method on Pt/Ti/SiO2/Si. The effect of Mg doping on the crystallization, structure and dielectric properties of PBST thin films were investigated by XRD, SEM, Agilent 4294A precision impedance analyzer. The results show that the dielectric constant and dielectric loss decreased with increasing amounts of Mg dopant; but the tunability were dropped first and risen then. The Mg-doped PBST thin film's figure of merit show maxi- mum value with the optimal :c(Mg)=0.8%.
Keywords:PBST  Mg doped  Sol-Gel  dielectric properties
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