硫酸蚀刻溶液中InP半导体之薄膜生长

利用X一射线衍射技术研究了InP半导体在H2SO4/H2O蚀刻溶液中之薄膜生长，分析P型InP（100）在酸性蚀刻溶液中表面氧化物的化学组成．实验中．一台12kW的铜旋转阳极x射线源用于保证高敏感度的表面型态分析．利用广角度衍射（WAD），从一个基体氧化物的晶格组界面检测衍射线来分析蚀刻溶液H2SO4/H2O每个衍射线出现可能引起的反应物表面层反射光束的干涉图案，生成物为具有单晶结构的磷酸铟水合物（InP04-xH20）．观察到一组（nh，nk，n1）的广角度衍射中磷酸铟水舍物（InPO4·xH2O）相的反射峰，并且侦测到在每个反射光束的干扰振荡现象．利用感应电浆耦合离子发射光谱法测定溶液中的铟（In）和磷（P）成分，分析InP在不同浓度的H2S04／1-120溶液中的溶解速率．观察发现，在InP的氧化表面上存在混合成份的氧化物和单一成份生成物．借着ICP仪器分析测试在照光或暗室下，InP在H2SO4/H2O系统的溶解率差异几乎是不可分辨的．藉由X射线结果对比JCPDS卡标准化合物中的数据．可获得酸性溶液蚀刻反应中各种表面氧化物的结构特点和反应现象．

Study on Thin Film Growth of InP in H2SO4 Etchants

In this paper, the thin film growth of InP in HzSO4 etchants was investigated using X-ray diffraction technique, and the chemical composition of surface oxides in p-type InP（100） after etching in H2SO4/H2O etchants was analyzed. In the test, A 12 kW rotating anode（Cu） X-ray source was used to ensure high sensitivity in the surface morphology analysis. Using wide angle diffraction（WAD）, the diffraction from a crystal lattice set on the surface of matrix oxide was detected to explore H2SO4/H2O etchants. There is interference patterns, possibly cause the reflex beam from thin layers of reactant, in each diffracted ray, and the resultant was indium phosphate hydrate（InPO4.xH2O） with a single-crystal structure. Only one set of（nh, nk, nl） reflection peaks of the indium phosphate hydrate phase was observed in wide angle diffraction, and there was an interference oscillation in each reflected beam. The compo- nent of In and P in the in H2SO4/H2O was mensurated by inductively coupled plasma emission spectrometry, and the dissolution rates of InP in H2SO4/H2O of various concentrations were quantitatively analyzed. The mixed component oxides and single component products were observed on the oxidized surface of InP. The dissolution rate of InP in H2SO4/H2O systems was almost indiscernible by ICP test under either illumination or dark. Comparing the X-ray re- suits and the standard compound data in the JCPDS cards, the structural characters and the reaction phenomena of various surface oxides in H2SO4/H2O etchants can be obtained.