| 重掺Sb硅单晶中氧沉淀的研究 |
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| 引用本文： | 余思明,周福生,徐冬良,张烈华. 重掺Sb硅单晶中氧沉淀的研究[J]. 中南大学学报(自然科学版), 1989, 0(4) |
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| 作者姓名： | 余思明 周福生 徐冬良 张烈华 |
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| 作者单位： | 中南工业大学，峨眉半导体材料研究所，峨眉半导体材料研究所，江汉石油学院 |
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| 摘 要： | 本文用化学腐蚀和透射电镜及其能谱分析研究了重掺Sb硅单晶中的氧沉淀。化学腐蚀结果表明,Sb的掺入有促进形核的作用,但其最大成核速率仍在750℃左右。随着退火时间的延长,沉淀密度首先增加,而后又下降。透射电镜观察到氧沉淀呈平行四边形平板状,并发现有氧沉淀群及与沉淀相连的位错缠结,但未发现层错。对氧沉淀大小的测量结果表明,它的生长满足t~(3′4)规律。能谱分析指出,Sb元素不参与氧沉淀。为解释Sb的掺入促进形核,本文提出了空位和间隙硅原子影响氧沉淀形成的模型。按此模型,单位体积晶坯的自由能变化应为ΔG_v=-ΔH_v(O)(T_e(O)-T)/T_e(O)-ΔH_v(Si)(T-T_e(Si))/T_e(Si)假设Sb的掺入增加空位浓度,减小间隙硅原子浓度。为此,间隙硅原子的饱和温度将降低。由上式,ΔG_v将随Sb浓度的增加而为更大的负值。因此,氧沉淀形核速率将随掺Sb浓度的增加而加速。
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| 关 键 词： | 缺陷 简并半导体 |
THE INVESTIGATION OF OXYGEN PRECIPITATION IN HEAVILY Sb-DOPED SILICON CRYSTAL |
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| She Siming,Zhou Fusheng,Xu Dongliang,Zhang Liehua Central South University of Technology Emei Institute of Semiconductor Materials Jianghan Institute of Petroleum. THE INVESTIGATION OF OXYGEN PRECIPITATION IN HEAVILY Sb-DOPED SILICON CRYSTAL[J]. Journal of Central South University:Science and Technology, 1989, 0(4) |
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| Authors: | She Siming Zhou Fusheng Xu Dongliang Zhang Liehua Central South University of Technology Emei Institute of Semiconductor Materials Jianghan Institute of Petroleum |
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| Affiliation: | She Siming;Zhou Fusheng;Xu Dongliang;Zhang Liehua Central South University of Technology Emei Institute of Semiconductor Materials Jianghan Institute of Petroleum |
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| Abstract: | The oxygen precipitation (OP) in heavily Sb-doped silicon crystal has been investigated. Therelations between nucleation rate and annealing temperature, OP density and annealing time havebeen obtained; the effect of Sb doping level on the OP formation has been studied; the growthcurve of OP has been measured; the shape of OP has been observed by means of TEM and no Sbhas been found in OP with EDAX. From the experimental results, it is concluded tnat OP isrestrained and its nucleation is enhanced due to the high Sb doping level. |
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| Keywords: | defects degenerate semicondutors |
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