| 半导体多重直角势垒结构中的电子共振隧穿 |
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| 引用本文： | 吴晓薇,郭子政. 半导体多重直角势垒结构中的电子共振隧穿[J]. 内蒙古师范大学学报(自然科学版), 1994, 0(4) |
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| 作者姓名： | 吴晓薇 郭子政 |
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| 作者单位： | 内蒙古农牧学院基础部，内蒙古师范大学物理系 |
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| 摘 要： | 把一维Ｎ重直角势垒结构共振隧穿问题的解析工作推广到以多个势垒为单元任意重复排列的统一模型，并考虑了价带的影响。对单元Ｍ为单势垒和双势垒的结构得到简便的透射系数公式。本文结果还证明，发生共振隧穿的电子能量必须位于以Ｍ为原胞的周期系统的允许带内，考虑价带影响后，同等条件下发生共振隧穿的能量明显增大。
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| 关 键 词： | 共振隧穿，半导体超晶格，四带K·P模型，包络函数近似，传输矩阵方法 |
Resonant Tunneling in Semiconductor Rectangular Multibarrier Structures |
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| Wu Xiaowei. Resonant Tunneling in Semiconductor Rectangular Multibarrier Structures[J]. Journal of Inner Mongolia Normal University(Natural Science Edition), 1994, 0(4) |
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| Authors: | Wu Xiaowei |
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| Abstract: | A general model,which is built up of a kind of unit,consisted Of several barriers and piled repeatedly,is given in this paper based on the analytical works of n-fold rectangular barrier structures.The effect of the valence band is also considered in thismodel.Simple formulas of the transmissin coefficiant for one-barrier and two-barrierstructures have been derived. The results of this paper also showned that the resonant tun- neling energies must lie in the allowed bands of the periodic system which has the unit men- tioned above as the premary cell and greater energies are needed for resonant tunneling with regard of the effect of the valence band. |
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