| Al—Ti／W—PtSi—Si系统电性能的研究 |
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| 引用本文： | 李思渊,张同军.Al—Ti／W—PtSi—Si系统电性能的研究[J].应用科学学报,1991,9(1):61-68. |
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| 作者姓名： | 李思渊 张同军 |
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| 作者单位： | 兰州大学
(李思渊，张同军，王晓岗)，兰州大学(贾笑天) |
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| 摘 要： | 本文给出了Al-Ti/W-PtSi-Si、Al-Ti/W-Si等多层结构电学性能,特别是欧姆接触与抗电迁移性的研究结果.包括电子能谱分析,扫描电镜观测表面形貌,电迁移激活能的确定以及在场感应晶体管和集成电路中的应用效果等.还讨论了相关的作用机理.
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| 关 键 词： | 多层金属膜 半导体器件 电性能 |
THE INVESTIGATION OF ELECTRICAL CHARACTERISTICS OF Al-Ti/W-PtSi-Si SYSTEM |
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| LI SIYUAN ZHANG TONGJUN WANG XIAOGANG JIA XIAOTIAN.THE INVESTIGATION OF ELECTRICAL CHARACTERISTICS OF Al-Ti/W-PtSi-Si SYSTEM[J].Journal of Applied Sciences,1991,9(1):61-68. |
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| Authors: | LI SIYUAN ZHANG TONGJUN WANG XIAOGANG JIA XIAOTIAN |
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| Institution: | Lanzhou University |
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| Abstract: | In this paper, the electrical characteristics, especially the ohmio contact and electromigration properties of the Al-Ti/W-PtSi system were studied. The surface components, interface profile and the variation of surface morphology with the annealing treatment conditions of this sysbem were observed by AES and SEM methods. The activation energy of the elecbromigration process was also presented. Surther, We investigated the application effects of the system Al-Ti/W-PtSi for SIT devices and 10, and got excellent effects. Finally, the action mechanism concerned with these effects were discussed. |
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| Keywords: | anti-electromigration properies surface morphology specific contact resistance |
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