| 光电晶体管基区分布电阻的计算 |
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| 引用本文： | 方龙森.光电晶体管基区分布电阻的计算[J].应用科学学报,1991,9(1):69-78. |
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| 作者姓名： | 方龙森 |
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| 作者单位： | 上海科学技术大学 |
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| 基金项目： | 上海市科学技术发展基金项目863840515资助 |
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| 摘 要： | 给出了包括解析式外基区电阻和从SEDAN程序计算得到的基区Gummel数在内的内基区电阻的计算.结果表明该电阻与光敏区面积、发射区边长、发射区位置、发射极电流等因素有关.方形光敏区中发射极的最佳位置在中心;光敏区边长对发射区边长的最佳比值是7.578425:1.这些结果将被用于设计低噪声和高频光电晶体管.
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| 关 键 词： | 低噪声 模型化 RB 光电晶体管 |
| 收稿时间： | 1989-04-10 |
| 修稿时间： | 1989-06-29 |
CALCULATION OF THE BASE DISPERSE RESISTANCE OF PHOTOTRANSISTOR |
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| FANG LONGSEN.CALCULATION OF THE BASE DISPERSE RESISTANCE OF PHOTOTRANSISTOR[J].Journal of Applied Sciences,1991,9(1):69-78. |
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| Authors: | FANG LONGSEN |
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| Institution: | Shanghai University of Science and Technology |
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| Abstract: | This paper first gives the calculating method that includes the analysis formula, that is,and Gummul numbers from SEDAN.Results show that the resistance relates to the area of the photo-excited region, the side length of the emitter region, the position of the emitter region, and the emitter current. We also find that the optimizing position of the emitter region in the square photo-excited region is in the center; and that the optimizing ratio of the side length of the photo-excited region W to the side length of the emitter region is 7.578425:1. These results will be used to design low noise, high frequency phototransistors. |
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| Keywords: | low noise phototransistor RB modelling |
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