| 硅光伏测量电池的设计原理 |
| |
| 引用本文： | 安其霖,史伟民.硅光伏测量电池的设计原理[J].应用科学学报,1991,9(4):284-289. |
| |
| 作者姓名： | 安其霖 史伟民 |
| |
| 作者单位： | 上海科学技术大学
(安其霖，史伟民)，上海科学技术大学(施菊园) |
| |
| 摘 要： | 讨论了硅光伏测量电池的设计原理.还讨论了掺杂浓度、结深和表面复合速度对光伏电池主要参数(如开路电压、短路电流、反向暗电流和光谱响应)的影响.为了应用的需要,分析了串联电阻和傍漏电阻对线性的影响.最后给出了温度效应的数学模型和典型电路设计与R_(sA)的关系.
|
| 关 键 词： | 光伏电池 光电传感元件 硅 掺杂 |
PRINCIPLE OF DESIGNING SILICON PHOTOVOLTAGE MEASURED CELLS |
| |
| AN QILIN SHI WEIMIN SHI JUYUAN.PRINCIPLE OF DESIGNING SILICON PHOTOVOLTAGE MEASURED CELLS[J].Journal of Applied Sciences,1991,9(4):284-289. |
| |
| Authors: | AN QILIN SHI WEIMIN SHI JUYUAN |
| |
| Abstract: | The principle of designing silicon photovoltage measured cells is discussed The effect of impurities, junction depth and surface recombination on the main parameters are also discussed. The main parameters are open-oirouit voltage, short-circuit current, spectrum response and dark current. For application sake, the effects of series and shunt resistances on the linearity of the cell are analysed. In the last part of this paper, the mathematical model of temperature effect and the relationship between shunt resistance and the typical circuit design are demonstrated |
| |
| Keywords: | photovoltage cell spectrum response temperature effect linearity of cell |
| 本文献已被 维普 等数据库收录！ |
