| 硅单晶杂质补偿度对超高反压大功率晶体管耐压特性的影响 |
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| 引用本文： | 吴仲墀 张维宽. 硅单晶杂质补偿度对超高反压大功率晶体管耐压特性的影响[J]. 应用科学学报, 1991, 9(1): 91-94 |
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| 作者姓名： | 吴仲墀 张维宽 |
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| 作者单位： | 复旦大学(吴仲墀，钱佑华)，上海无线电七厂(张维宽)，上海第二教育学院(罗振华) |
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| 摘 要： | 一、引言 超高反压大功率晶体管DF104是电视机的重要电子器件。提高其质量和合格率是发展国产电视机的重要课题之一。在严格的器件设计和工艺条件下,采用低补偿度的优质硅单晶材料,能有效地提高这晶体管的击穿电压及其合格率,从而降低其成本。 实验用的衬底硅单晶片是电阻率大体相同(P≈80Ωom)的N-Si。实验时,从同一硅单晶锭切下硅片,用55K低温霍尔法和迭代法抽样检测其杂质补偿度K,再将和抽样检测样品相邻的硅片,经严格抛光清洗之后投片生产晶体管。每次生产条件严格保持相同。对生产出的晶体管,统测其耐压BV_(ceo)和BV_(cbo)及其合格率ξ,η等。合格率ξ和η分别定义为耐压≥某额定耐压BV_(ceo)和BV_(cbo)的成品数对总成品数之比。
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| 关 键 词： | 晶体管 杂质补偿度 硅 DF104 耐压 |
THE EFFECTS OF THE IMPURITY COMPENSATION RATIO IN THE CRYSTALLINE SILICON ON THE VOLTAGE CHARACTERISTIC OF THE TRANSISTOR WITH HIGH POWER AND HIGH BREAKDOWN VOLTAGE |
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| Wu ZHONGCHI QIAN YOUHUA. THE EFFECTS OF THE IMPURITY COMPENSATION RATIO IN THE CRYSTALLINE SILICON ON THE VOLTAGE CHARACTERISTIC OF THE TRANSISTOR WITH HIGH POWER AND HIGH BREAKDOWN VOLTAGE[J]. Journal of Applied Sciences, 1991, 9(1): 91-94 |
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| Authors: | Wu ZHONGCHI QIAN YOUHUA |
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| Affiliation: | Wu ZHONGCHI QIAN YOUHUA(Fudan University)ZHANG WEIKUAN (Shanghai No. 7 Radio Factory)Luo ZHENHUA (Shanghai No. 2 Education Institute) |
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| Abstract: | Experimental results indicate that for the crystalline silicon substrates with basically the same resistivity the lowering of the impurity compensation ratio can effectively raise the breakdown voltage and the end product ratio of the transistor. The empirio formula, which expresses the dependence of the maximum breakdown voltage of the transistors made in a single N-Si wafer on the impurity compensation ratio, is obtained from the experiment. A preliminary analysis is also obtained here. |
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| Keywords: | impurity compensation ratio avalanche breakdown maximum electric field in junction depletion layer. |
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