掺氧多晶硅薄膜退火特性的研究

掺氧多晶硅薄膜作为钝化膜己成功地应用于半导体器件。为了适应器件制造过程中的高温热处理,有必要探讨膜的高温热退火物理效应。本文从薄膜的腐蚀速率、膜的厚度以及膜的折射率随不同退火温度的变化,显示了掺氧多晶硅薄膜经高温退火的致密效应。而从膜的红外吸收谱测量表明膜中含氧量基本不变,但Si-O键吸收峰随着退火温度的升高向高频方向移动,并且愈益接近SiO_2的红外吸收谱。由此说明高温热退火使无定形的生长层薄膜再结构为Si多晶颗粒和SiO_2。使膜中SiO_2成份随着退火温度升高也跟着增加。

Investigation on Anneal Properties of Oxygen-doped Polycrystalline Silicon

Here,through the measurements of etch rate, film thickness and refractive index of films, it is shown that the oxygen-doped polycrystalline silicon films have been densified with high temperature annealing. Moreover, infrared spectra of films shows a stable oxygen content and a shift of Si-O band absorption peak to higher frequency with increasing annealing temperature. After high temperature annealing, the infrared spectrum of film is resemble with that of SiO_2. It is concluded that the as- deposited film is reconstructed into polycrystalline grains and SiO_2 during heat annealing,and the SiO_2 component increases with the annealed temperature.