| SI-GaAs光电导和光霍尔特性研究 |
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| 引用本文： | 钟金权,谭丽芳,廖丽英,汪乐,陈正秀.SI-GaAs光电导和光霍尔特性研究[J].应用科学学报,1984,2(3):280-282. |
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| 作者姓名： | 钟金权 谭丽芳 廖丽英 汪乐 陈正秀 |
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| 作者单位： | 中国科学院上海冶金研究所 |
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| 摘 要： | 研制了一套半绝缘半导体光电导率(PC)和光霍尔特性(PH)测试系统。应用该系统测量了多种类型SI-GaAs体单晶室温和77K的光电导特性及典型样品的室温光霍尔特性,对获得的谱线特征从Cr和O能级的角度作了分析讨论。
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| 收稿时间： | 1982-08-25 |
AN INVESTIGATION OF PHOTOCONDUCTIVITY AND PHOTO-HALL EFFECT IN SI-GaAs |
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| ZHONG JINQUAN,TAN LIFANG,LIAO LIYIN,WANG LER,CHEN ZENGXTU.AN INVESTIGATION OF PHOTOCONDUCTIVITY AND PHOTO-HALL EFFECT IN SI-GaAs[J].Journal of Applied Sciences,1984,2(3):280-282. |
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| Authors: | ZHONG JINQUAN TAN LIFANG LIAO LIYIN WANG LER CHEN ZENGXTU |
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| Institution: | Shanghai Institute of Metallurgy, Academia Sinica |
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| Abstract: | A equipment for the measurements of photo-conductivity and photo-Hall effect, which provides a useful tool to investigate the influences of deep level impurities on the properties of semi-insulating materials, has been developed. The results at RT and 77 K by using this equipment on several different types of SI-GaAg crystals are reported. We also discuss some features of spectra obtained from these measurements. in view of the existence of Cr and O levels in crystals. |
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