GaN／InGaN应变层临界厚度的计算

本文主要借鉴PB模型、Fisher模型和Matthews模型并通过优化其中的组分和滑移间距参数，考虑影响临界厚度的相关因素，对GaN／InGaN异质结应变层临界厚度进行理论计算，再结合实验值进行比较分析。发现PB模型比较能准确估计GaN／InGaN异质结应变层临界厚度．最后进一步考虑热应力对临界厚度的影响时，发现对其影响不大．

Calculation of the Critical Layer Thickness for GaN/InGaN

The paper separately calculates the critical layer thickness for an InGaN expitaxial layer growthing on a GaN substrate and proposes with PB model, Fisher modeland Matthews model by analyzing parameters about passion ration and Burgers vector, and then compares with experimental values reported for various GaN/InGaN systems. The CLT calculated by the PB model can yield a better agreement with the measured values. At last, we conclude that the thermal stress has little effect on the critical layer thickness for GaN/InGaN.