非对称Halo的异质栅SOI MOSFET阈值电压解析模型

为了改善MOSFET的短沟道效应和驱动电流，首次提出了非对称Halo掺杂的异质栅SOIMOSFET结构，这种结构在沟道源端一侧注入浓度较高的杂质，再由具有不同功函数的两种材料拼接形成栅极．通过求解二维电势Poisson方程，建立了全耗尽器件表面势和阈值电压的解析模型．研究表明，该结构能有效抑制漏致势垒降低和热载流子效应，且在沟道长度小于100nm条件下，阈值电压表现出明显的反短沟道特征，在Halo和栅材料界面附近的电场峰值使通过沟道的载流子的传输速度显著提高，解析模型与二维数值模拟软件MEDICI所得结果吻合度较高．

Analytical Model for Threshold Voltage of Hetero-Gate SOI MOSFET with Asymmetric Halo

A hetero-gate SOI MOSFET structure with asymmetric halo doping is proposed to improve the short channel effect and driving current.The impurity with higher concentration is injected into the channel end near the source and two materials with different work function are put together to form the gate.The analytical models of surface potential and threshold voltage for the fully depleted device are constructed by solving the 2D potential Poisson's equation.It is shown that the proposed structure can effectively suppress drain induced barrier lowering and hot carrier effect,and the threshold voltage clearly exhibits the considerable reverse short channel effect when the channel length is less than 100 nm.The two electric field peaks near the interface of halo and gate materials will greatly increase the transfer speed of carriers passing through the channel.The derived analytical models accord with the result from two-dimension device simulator MEDICI very well.