| 高频放电处理ITO电极对有机电致发光器件性能的影响 |
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| 引用本文： | 刘德武,朱文清,吴有智,蒋雪茵,张志林,许少鸿.高频放电处理ITO电极对有机电致发光器件性能的影响[J].上海大学学报(自然科学版),2004,10(6):551-554. |
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| 作者姓名： | 刘德武 朱文清 吴有智 蒋雪茵 张志林 许少鸿 |
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| 作者单位： | 上海大学,材料科学与工程学院,上海,201800 |
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| 基金项目： | 国家“86 3”高科技计划资助项目 (2 0 0 1AA3 1 3 0 70 )，国家自然科学基金资助项目 (6 0 0 770 2 0 , 90 2 0 1 0 3 4) |
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| 摘 要： | 采用高频放电的方法对ITO电极表面进行了处理,并用接触势差法测量了处理前后的ITO表面功函数.用单载流子器件模拟表明ITO经高频放电处理后降低了器件界面的空穴注入势垒.此外,处理后的ITO的双层发光器件的驱动电压下降,发光亮度及效率得到明显提高.
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| 关 键 词： | 高频放电 功函数 有机电致发光 空穴注入势垒 |
| 文章编号： | 1007-2861(2004)06-0551-04 |
| 修稿时间： | 2003年10月27 |
Effect of High Frequency Discharge Treatment on Performances of Organic Thin Film Electroluminescent Device |
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| LIU De-wu,ZHU Wen-qing,WU You-zhi,JIANG Xue-yin,ZHANG Zhi-lin,XU Shao-hong.Effect of High Frequency Discharge Treatment on Performances of Organic Thin Film Electroluminescent Device[J].Journal of Shanghai University(Natural Science),2004,10(6):551-554. |
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| Authors: | LIU De-wu ZHU Wen-qing WU You-zhi JIANG Xue-yin ZHANG Zhi-lin XU Shao-hong |
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| Abstract: | Surface of indium tin oxide (ITO) is treated using high frequency discharge, and the work function is measured with the method of contact barrier difference. Analogy of hole injection barrier indicates that the interface barrier of ITO is lowered after being treated with the high frequency discharge method using hole-only devices. In addition, improved performances, i.e., lower turn-on vol-(tages) and higher luminance and efficiency of bilayer devices with treated ITO, are found in devices that are ITO-treated. |
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| Keywords: | high frequency discharge work function oganic LEDs hole injection barrier |
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