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横截面为三角形的半导体量子线结构的弹性解
引用本文:楚海建,张凯,杨洪伟,杨小令,梁金栋. 横截面为三角形的半导体量子线结构的弹性解[J]. 扬州大学学报(自然科学版), 2007, 10(3): 28-32
作者姓名:楚海建  张凯  杨洪伟  杨小令  梁金栋
作者单位:1. 扬州大学,水利科学与工程学院,江苏,扬州,225009
2. 北京大学,工学院,力学与空天技术系,北京,100871
3. 华东理工大学,机械与动力工程学院,上海,200237
基金项目:扬州大学优秀青年骨干教师培养对象资助项目
摘    要:在半导体异质微纳米结构中,晶格失配和热失配等因素引起的弹性场对结构的光学和电学等物理性能产生重要影响.研究了晶格失配和热失配在半导体量子线结构中所产生的弹性场,在分析圆柱形量子线结构弹性场的基础上,推导得到了任意截面形状量子线结构解的一般形式,并给出无限大基体内横截面为三角形量子线结构的解析结果.该结果可为进一步研究弹性场对半导体量子线结构物理性能的耦合作用打下必要的基础.

关 键 词:量子线  初始失配应变  弹性解  连续介质力学
文章编号:1007-824X(2007)03-0028-05
修稿时间:2007-06-01

Analytical solution of the stress inside a trigonal quantum-wire structure in an infinite matrix
CHU Hai-jian,ZHANG Kai,YANG Hong-wei,YANG Xiao-ling,LIANG Jin-dong. Analytical solution of the stress inside a trigonal quantum-wire structure in an infinite matrix[J]. Journal of Yangzhou University(Natural Science Edition), 2007, 10(3): 28-32
Authors:CHU Hai-jian  ZHANG Kai  YANG Hong-wei  YANG Xiao-ling  LIANG Jin-dong
Abstract:The elastic field induced by lattice mismatch or thermal mismatch between the heterogeneous materials inside a semiconductor micro-or nano-structure is essential to analyses and understanding of the physical and mechanical properties of the structure.In this article,the stress inside a quantum-wire structure is studied.Based on the derived expression of the stress inside a quantum-wire structure with arbitrarily shaped cross section,the analytical solution of the stress inside a trigonal quantum-wire structure in an infinite matrix is obtained.The obtained result is useful to study couple effect between the physical properties of semiconductor quantum-wire nanostructures and the elastic fields.
Keywords:quantum wire  initial misfit strain  analytical solution  continuum mechanics
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