高能有效真二次电子发射系数与逸出深度和入射角的关系

根据金属二次电子发射的主要物理过程和有效真二次电子发射系数的定义,从理论上论述了高能原电子斜射入金属发射体内的金属的有效真二次电子发射系数的表达式,然后又根据高能原电子斜轰击金属并激发产生二次电子发射的特点,推导出金属的有效真二次电子发射系数与金属逸出深度和高能原电子入射角度的关系式.对结果进行了讨论并得出结论:当高能原电子斜射入金属发射体内时,金属的有效真二次电子发射系数与高能原电子的入射角的余弦函数近似成反比,金属的有效真二次电子发射系数与金属逸出深度近似成正比.

The relations among real efficient secondary electron emission coefficient at high energy, the incident angle of primary electron and depth

Based on main physical processes of secondary electron emission from metal and the definition of real efficient secondary electron emission coefficient,this paper deprived the formula of real efficient secondary electron emission coefficient under the condition that primary electron at high energy hit on metal obliquely,based on the character of production of secondary electron excited by primary electron at high incident electron energy,the relation among real efficient secondary electron emission coefficient from metal,the incident angle of primary electron at high energy and depth was deprived.The results were discussed,a conclusion was drawn that real efficient secondary electron emission coefficient from metal was reversely proportional to the cosine of the incident angle of primary electron at high energy,but real efficient secondary electron emission coefficient from metal was proportional to depth.