| Optimization and Evaluation of Sputtering Barrier/Seed Layer in Through Silicon Via for 3-D Integration |
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| 作者姓名： | Tiwei Wei Jian Cai Qian Wang Yang Hu Lu Wang Ziyu Liu and Zijian Wu |
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| 摘 要： | The barrier/seed layer is a key issue in Through Silicon Via （TSV） technology for 3-D integration. Sputtering is an important deposition method for via metallization in semiconductor process. However, due to the limitation of sputtering and a ＂scallop＂ profile inside vias, poor step coverage of the barrier/seed layer always occurs in the via metallization process. In this paper, the effects of several sputter parameters （DC power, Ar pressure, deposition time, and substrate temperature） on thin film coverage for TSV applications are investigated. Robust TSVs with aspect ratio 5 ： 1 were obtained with optimized magnetron sputter parameters. In addition, the influences of different sputter parameters are compared and the conclusion could be used as a guideline to select appropriate parameter sets.
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| 关 键 词： | 溅射参数 集成优化 种子层 阻挡层 3-D 评价 硅 半导体工艺 |
Optimization and Evaluation of Sputtering Barrier/Seed Layer in Through Silicon Via for 3-D Integration |
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| Tiwei Wei,Jian Cai,Qian Wang,Yang Hu,Lu Wang,Ziyu Liu,and Zijian Wu.Optimization and Evaluation of Sputtering Barrier/Seed Layer in Through Silicon Via for 3-D Integration[J].Tsinghua Science and Technology,2014(2):150-160. |
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| Authors: | Tiwei Wei Jian Cai Qian Wang Yang Hu Lu Wang Ziyu Liu Zijian Wu |
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| Institution: | [1]with the Institute of Microelectronics, Tsinghua University, Beijing 100084, China. [2]with both the Institute of Microelectronics and Tsinghua National Laboratory for Information Science and Technology, Tsinghua University, Beijing 100084, China |
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| Abstract: | The barrier/seed layer is a key issue in Through Silicon Via(TSV) technology for 3-D integration.Sputtering is an important deposition method for via metallization in semiconductor process. However,due to the limitation of sputtering and a "scallop" profile inside vias,poor step coverage of the barrier/seed layer always occurs in the via metallization process. In this paper,the effects of several sputter parameters(DC power,Ar pressure,deposition time,and substrate temperature) on thin film coverage for TSV applications are investigated.Robust TSVs with aspect ratio 5 1 were obtained with optimized magnetron sputter parameters. In addition,the influences of different sputter parameters are compared and the conclusion could be used as a guideline to select appropriate parameter sets. |
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| Keywords: | barrier/seed layer Through Silicon Via （TSV） sputtering optimization |
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