| 低温下硅双极晶体管基区高注入禁带变窄效应 |
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| 引用本文： | 肖志雄,郑茳.低温下硅双极晶体管基区高注入禁带变窄效应[J].东南大学学报(自然科学版),1993,23(6):59-63. |
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| 作者姓名： | 肖志雄 郑茳 |
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| 作者单位： | 东南大学微电子中心，东南大学微电子中心，东南大学微电子中心，东南大学微电子中心 |
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| 摘 要： | 重掺杂效应是引起基区禁带变窄的主要原因，但是高注入也将引起禁带变窄效应，这一影响在低温下尤其明显。本建立了低温下硅双极晶体管基区高注入禁带变窄效应的计算理论模型，获得的计算值与实验结果相一致。
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| 关 键 词： | 高注入 禁带变窄效应 晶体管 |
High-Injection Band-Gap Narrowing Effect of the Base in Silicon Bipolar Transistors at Low Temperatures |
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| Xiao Zhixiong Zheng Jiang Wu Jin Wei Tongli.High-Injection Band-Gap Narrowing Effect of the Base in Silicon Bipolar Transistors at Low Temperatures[J].Journal of Southeast University(Natural Science Edition),1993,23(6):59-63. |
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| Authors: | Xiao Zhixiong Zheng Jiang Wu Jin Wei Tongli |
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| Institution: | Microelectronics Center |
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| Abstract: | The heavy doping effect is the main reason which results in the base band-gap narrowing, but the high-injection minority-carriers will also give rise to the base band-gap narrowing.This influence is more obvious at the low temperatures.than that at the room temperature.In this paper,the theoretical model of the transistor's base high injection hand-gap narrowing effect will be given,and the calculating values are in accord with the practical ones. |
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| Keywords: | high-injection level band-gap narrowing effect silicon low temperature |
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