| 基于锑化铟磁敏电阻的接近开关动态特性研究 |
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| 引用本文： | 秦玉伟. 基于锑化铟磁敏电阻的接近开关动态特性研究[J]. 河南科学, 2011, 29(7): 850-852 |
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| 作者姓名： | 秦玉伟 |
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| 作者单位： | 渭南师范学院物理与电子工程系,陕西渭南,714000 |
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| 基金项目： | 陕西省教育厅项目，渭南师范学院研究生专项项目 |
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| 摘 要： | 设计了一种基于锑化铟磁敏电阻的接近开关,介绍了锑化铟磁敏电阻结构及接近开关工作原理,并设计了接近开关信号处理电路.动态特性实验结果表明:径向间距为4 mm时,接近开关动作距离大于8mm,回差距离小于0.06 mm,重复定位精度小于0.04 mm.该接近开关具有良好的动态特性,其灵敏度高,易安装且结构简单,成本低,可以实...
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| 关 键 词： | 接近开关 磁敏电阻 锑化铟 |
Research on Dynamic Characteristics of Proximity Switch Based on InSb Magnetoresistance |
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| Qin Yuwei. Research on Dynamic Characteristics of Proximity Switch Based on InSb Magnetoresistance[J]. Henan Science, 2011, 29(7): 850-852 |
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| Authors: | Qin Yuwei |
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| Affiliation: | Qin Yuwei(Department of Physics and Electronic Engineering,Weinan Teachers University,Weinan 714000,Shaanxi China) |
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| Abstract: | A proximity switch based on InSb magnetoresistance was designed.The construction of InSb magnetor-esistance and the working principle of the proximity switch were introduced.The signal processing circuit of the proximity switch was also designed.The dynamic characteristic experiment shows that when the radial distance is 4 millimeter,the action-distance of is more than 8 millimeter,the hysteresis-distance is less than 0.06 millimeter and the repeating location accuracy is smaller than 0.04 millimeter.The proximity switch has favorable dynamic characteristics,high sensitivity,simple construction and low cost,and is easy to install.It can be mass-produced,used for ferromagnetic substance detecting in industrial fields. |
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| Keywords: | proximity switch magnetosensitive resistance indium-antimonide(InSb) |
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