| 难熔金属及硅化物薄膜制备技术研究 |
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| 引用本文： | 胡延年,徐伟.难熔金属及硅化物薄膜制备技术研究[J].辽宁大学学报(自然科学版),1998,25(1):52-55. |
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| 作者姓名： | 胡延年 徐伟 |
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| 作者单位： | 辽宁大学电子科学与工程系(胡延年，张绍成)，天津理工学院北辰院区自动化系(徐伟) |
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| 摘 要： | 本文对难熔金属及其硅化物的形成，特性进行了研究。
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| 关 键 词： | 磁控溅射 难熔金属 硅化物 薄膜 |
Technology Study of Unmelting metals and Silicide Film Preparation |
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| Hu Yannian,Zhang Shaocheng.Technology Study of Unmelting metals and Silicide Film Preparation[J].Journal of Liaoning University(Natural Sciences Edition),1998,25(1):52-55. |
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| Authors: | Hu Yannian Zhang Shaocheng |
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| Institution: | Hu Yannian Zhang Shaocheng Department of Electronic Science and Engineering Liaoning University,Shenyang 110036 Xu Wei Tianjin College of Science and Engineering,Beichen College zone,Tianjin 300400 |
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| Abstract: | In this paper, we studied the forms and properties of unmelting metals silicide TiSi 2, PtSi 2 by adopting the method of splashing unmelting metals and heat to silicify reaction. it plays an active role in resolving some questions in VISI technology. For example:(1)resolved the questions that grid resistor increase during decreasing the graph dimension of MOS circuit.(2)resolved the question that Ohmic contact and electron mobility by adopting silicide(PtSi 2) resist layer(W,Mo,Ti) Aluminium, multi layer meatal lines. |
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| Keywords: | Megnetism controll splash Unmeltingmetal Silicide |
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