| GaAs_(1-x)Sb_x/GaAs量子阱的Type-II特性 |
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| 引用本文： | 成鸣飞,成珏飞,罗向东. GaAs_(1-x)Sb_x/GaAs量子阱的Type-II特性[J]. 南通大学学报(自然科学版), 2006, 0(2) |
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| 作者姓名： | 成鸣飞 成珏飞 罗向东 |
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| 作者单位： | 南通大学 江苏南通226007(成鸣飞，罗向东)，苏州职业大学 江苏苏州215006(成珏飞) |
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| 摘 要： | 研究了分子束外延生长的不同含量的GaAs1-xSbx/GaAs量子阱的光荧光特性和时间分辨光谱特性.分析表明,利用电子空穴分离导致了能带弯曲和能带填充效应,实验结果说明了GaAs1-xSbx/GaAs异质结至少在Sb原子数目百分比为16%￣26%时是Type-II结构.
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| 关 键 词： | GaAs1-xSbx/GaAs 量子阱 异质结 Type-II结构 |
Type-II Characteristic of GaAs1-xSbx /GaAs Quantum Wells |
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| CHENG Ming-fei ,CHENG Jue-fei ,LUO Xiang-dong. Type-II Characteristic of GaAs1-xSbx /GaAs Quantum Wells[J]. Journal of Nantong University (Natural Science Edition), 2006, 0(2) |
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| Authors: | CHENG Ming-fei CHENG Jue-fei LUO Xiang-dong |
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| Affiliation: | CHENG Ming-fei 1,CHENG Jue-fei 2,LUO Xiang-dong 1 |
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| Abstract: | The fluorescent characteristic and the time resolution spectrum characteristic of GaAs1-xSbx /GaAs quantum wells grown on molecular beam epitaxy(MBE) are studied.By analyzing the experimental results,we can show that the separation of electrons and holes in GaAs1-xSbx /GaAs heterostructure results in band-bending and band-filling effects.The results suggest that GaAs1-xSbx /GaAs heterostructure is Type-II when Sb concentration is between 16 % and 26 % at least. |
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| Keywords: | GaAs1-xSbx /GaAs quantum well heterostructure Type-II structure |
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