Epitaxial growth of single-crystalline Ni46Co4Mn37In13 thin filmand investigation of its magnetoresistance |
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| Authors: | Chao Jing Yejun Yang Xiaolong Wang Pan Liao Dong Zheng Baojuan Kang Shixun Cao Jincang Zhang Jie Zhu and Zhe Li |
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| Institution: | Department of Physics, Shanghai University, Shanghai 200444, China;Department of Physics, Shanghai University, Shanghai 200445, China;Department of Physics, Shanghai University, Shanghai 200446, China;Department of Physics, Shanghai University, Shanghai 200447, China;Department of Physics, Shanghai University, Shanghai 200448, China;Department of Physics, Shanghai University, Shanghai 200449, China;Department of Physics, Shanghai University, Shanghai 200450, China;Department of Physics, Shanghai University, Shanghai 200451, China;State Key Laboratory of Surface Physics and Department of Physics, Fudan University, Shanghai 200433, China;College of Physics and Electronic Engineering, Key Laboratory for Advanced Functional and Low Dimensional Materials of Yunnan Higher Education Institutes,
Qujing Normal University, Qujing 655011, China |
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| Abstract: | Single-crystalline thin fi lm of Ni46Co4Mn37In13 alloy grown on MgO(0 0 1) was prepared by Pulsed Laser Deposition (PLD) method. The epitaxial growth process was monitored by in situ Reflection High Energy Electron Diffraction (RHEED). Structure measurements reveal that the single-crystalline Ni46Co4Mn37In13 film could be stabilized on MgO(0 0 1) as a face-centered-cubic (fcc) structure. From the evolution of RHEED, it can be deduced from the patterns that Volmer-Weber growth mechanism (3-D) dominates at the initial stage. Then, it becomes layer-by-layer growth mechanism (2-D) with the increase of the fi lm thickness. Lastly, growth mechanism converts back to 3-D when the fi lm is thickenough. Both electrical resistance and magnetoresistance (MR) were measured at various temperatures using Physical Property Measurement System (PPMS). The electrical resistance measurement indicates that the fi lm sample does not have martensitic transformation in the measurement temperature range. However, with the temperature increasing, the film sample exhibits a transition from metallic to semiconductor-like properties. Moreover, a small negative magnetoresistance was observed at different temperature, which can be explained by the spin-dependent scattering of the conduction electrons. |
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| Keywords: | Pulsed laser deposition Magnetoresistance |
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