首页 | 本学科首页   官方微博 | 高级检索  
     检索      

TEXTOR托卡马克上磁涨落水平的研究
引用本文:杨鑫,刘娇娇,高天梅,李梅,石跃江,巨洪军,竹锦霞,梁红飞,蔡武德,陈忠勇.TEXTOR托卡马克上磁涨落水平的研究[J].云南师范大学学报(自然科学版),2009,29(4):50-53.
作者姓名:杨鑫  刘娇娇  高天梅  李梅  石跃江  巨洪军  竹锦霞  梁红飞  蔡武德  陈忠勇
作者单位:1. 云南师范大学物电学院,云南,昆明,650092
2. 云南师范大学物电学院,云南,昆明,650092;可再生能源材料先进技术与制备教育部重点实验室,云南,昆明,650092
3. 中科院等离子体物理研究所,安徽,合肥,230031
基金项目:教育部科学技术研究重点项目,第十一届霍英东青年教师基金,云南省自然科学基金 
摘    要:利用逃逸电子的输运来诊断TEXTOR托卡马克上等离子体大破裂下的磁涨落水平。TEXTOR托卡马克采用包含产生逃逸影响的零维模型模拟了等离子体大破裂下的电流演化.根据模型参数-逃逸电子的损失速率,我们得到了TEXTOR托卡马克上的磁涨落水平。该磁涨落水平大约在10^-5量级,磁涨落水平随注入等离子体中原子数日的增加而增强。

关 键 词:逃逸电子  磁涨落

Determination of the magnetic fluctuation level in TEXTOR
X.Yang,J.J.Liu,T.M.Gao,M.Li,Y.J.Shi,H.J.Ju,J.X.Zhu,H.F.Liang,W.D.Cai,Z.Y.Chen.Determination of the magnetic fluctuation level in TEXTOR[J].Journal of Yunnan Normal University (Natural Sciences Edition),2009,29(4):50-53.
Authors:XYang  JJLiu  TMGao  MLi  YJShi  HJJu  JXZhu  HFLiang  WDCai  ZYChen
Institution:X. Yang, J.J. Liu, T.M. Gao, M. Li, Y.J. Shi, H.J. Ju, J.X. Zhu, H.F. Liang, W.D. Cai, Z.Y. Chen (1. Department of Physics, Yunnan Normal University, Kunming 650092, P. R. China;2. Key Laboratory of Advanced Technology and Manufacture for Renewable Energy Material, Ministry of Education, Kunming 650092;3. Institute of Plasma Physics, Chinese Academy of Sciences, Hefei 230031, P. R. China)
Abstract:The runaway transport is used to probe the magnetic fluctuation level for TEXTOR disruption plasmas. A zero dimensional model of the current quench including the generation of runaway electrons has been applied to simulate the experimental current evolutions during major disruptions Plasma Phys. Control. Fusion 50 (2008) 105007]. According to the loss rate of runaway electrons used in the fitting parameter of the zero dimensional model, the magnetic fluctuation level in TEXTOR is derived. It is found that the magnetic fluctuation level is in the order of 10-5, and it increases with the atom number mixed into the plasma.
Keywords:runaway electron  magnetic fluctuation
本文献已被 维普 万方数据 等数据库收录!
设为首页 | 免责声明 | 关于勤云 | 加入收藏

Copyright©北京勤云科技发展有限公司  京ICP备09084417号