| 非晶半导体带隙定域态中的跳跃导电 |
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| 引用本文： | 毛国民,陈坤基.非晶半导体带隙定域态中的跳跃导电[J].南京大学学报(自然科学版),1989,25(1):29-35. |
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| 作者姓名： | 毛国民 陈坤基 |
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| 作者单位： | 南京大学物理系固体微结构实验室，南京大学物理系固体微结构实验室 |
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| 摘 要： | 本文根据非晶半导体中的荷电悬挂键模型,用统计力学的方法推导出三种荷电缺陷中心的分布函数,并由此得到系统的费米能级和荷电中心上平均电子数的关系式。通过计算电子由一种缺陷中心向另一种缺陷中心的跳跃几率,解释了非晶半导体中的低温带隙跳跃导电问题。
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| 关 键 词： | 跳跃导电 非晶半导体 悬挂键 |
HOPPING CONDUCTION IN BAND GAP STATES OF AMORPHOUS SEMICONDUCTORS |
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| Mao Guomin Chen Kunji.HOPPING CONDUCTION IN BAND GAP STATES OF AMORPHOUS SEMICONDUCTORS[J].Journal of Nanjing University: Nat Sci Ed,1989,25(1):29-35. |
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| Authors: | Mao Guomin Chen Kunji |
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| Abstract: | In this paper, the distribution functions of three kinds of charge defect centers are given by using statistical mechanics method according to model of charge defect centers in amorphous semiconductors. The relation between Fermi energy and average electron number at charge defect centers is also given. The hopping conduction in energy gap of amorphous semiconducuors at low temperature is explained by calculating hopping probability when an electron hops from one defect center to the other. |
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| Keywords: | hopping conduction amorphous semiconductors semiconductor dangling bonds |
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