| 非晶态半导体多层膜的TEM及HREM研究 |
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| 引用本文： | 毛国民,严勇.非晶态半导体多层膜的TEM及HREM研究[J].南京大学学报(自然科学版),1989,25(3):42-49. |
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| 作者姓名： | 毛国民 严勇 |
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| 作者单位： | 南京大学物理系，南京大学物理系，南京大学固体微结构实验室，南京大学固体微结构实验室，南京大学固体微结构实验室 |
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| 摘 要： | 本文介绍了非晶态半导体多层膜剖面电镜样品的一种制备方法.报导了周期性调制和准周期性调制的非晶态半导体多层膜的剖面透射电子显微像和其对应的电子衍射花样的性质.通过高分辨电子显微像,研究了组成多层膜的子层材料的微观结构特性和异质结的界面性质.
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| 关 键 词： | 非晶态半导体 多层膜 TEM HREM |
THE STRUCTURE INVESTIGATION OF AMORPHOUS SEMICONDUCTOR MULTILAYER USING TEM AND HREM |
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| Mao Guomin Chen Kunji Yan Yong Chen Jun Feng Duan.THE STRUCTURE INVESTIGATION OF AMORPHOUS SEMICONDUCTOR MULTILAYER USING TEM AND HREM[J].Journal of Nanjing University: Nat Sci Ed,1989,25(3):42-49. |
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| Authors: | Mao Guomin Chen Kunji Yan Yong Chen Jun Feng Duan |
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| Institution: | Department of Physics and Solid State Microstructurcs Laboratory |
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| Abstract: | We have given an account of a preparation method of cross-section TEM samples of amorphous semiconductor multilayer films. The cross-section TEM photomicrographs and electron diffraction patterns arc presented for periodic and quasi-periodic modulated amorphous semiconductor multilayer films. By the use of HREM technique, we investigated microstructurc of multilayer film sublayers and interface properties of heterojunction between a-si:H sublayer and a-SiN_x:H sublayer or between multilayer film and c-Si substrate |
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| Keywords: | amorphous semiconductor multilayer TEM HREM |
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