H+ passivation of poly-si solar cells processed by different annealing processes |
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Authors: | Li Jin-chai J C Muller P Siffert |
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Institution: | (1) Department of Physics, Wuhan University, 430072 Wuhan, China;(2) Laboratoire PHASE, CNRS, 23 rue du Loess, BP 20-67037, Strasbourg Cedex 2, France |
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Abstract: | The effects of different annealing processes on the photovoltaic (PV) properties and the spectral response as well as minority
carrier lifetime in the bulk of unanalyzed PF5 ion implantation poly-Si solar cells were investigated. The different hydrogen passivation effects of defects in poly-Si
induced by three heat treatment processes are reported. We used RTA-rapid thermal annealing, YAG pulse laser annealing and
CTSA-classical three-step annealing for this study. The results show that cells processed by RTA (800°C, 4 sec) achieved the
best PV properties and spectral response among all annealed samples. Under this precess condition, no or few defects were
induced in bulk. While RTA (>-850°C for 4 sec), CTSA as well as YAG laser processes induced defects of different nature and
concentration in the bulk of cells. It is further shown that hydrogen ion implantation significantly improved, the performances
of poly-Si cells. It is able to efficiently remove the YAG laser induced defects in bulk. However, it cannot completely passivate
the defects induced by CTSA and RTA processes.
Biography: LI Jin-chai (1946-), male, Associate professor. Research direction: studies of ion beam modification of materials
and films of new functionail materials. |
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Keywords: | ion implantation polysilicon solar cells annealing defects hydrogen ion passivation |
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