| Si-nipi掺杂超晶格电子态的自洽计算 |
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| 引用本文： | 王恩哥,黄和鸾.Si-nipi掺杂超晶格电子态的自洽计算[J].应用科学学报,1988,6(4):351-356. |
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| 作者姓名： | 王恩哥 黄和鸾 |
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| 作者单位： | 辽宁大学 |
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| 摘 要： | 本文采用局域密度泛函近似自洽地计算了沿(100)方向调制的Si-nipi掺杂超晶格的电子态.得到了电子亚带能量和波函数随自由载流子浓度的变化规律.讨论了在较低的外界激发下,电子占据态和最近邻空态-(01)亚导带间的激发能.同时计算了Hartr?e势与自洽势下的电子密度分布曲线,发现自由载流子交换关联势Vxc(z)对亚带能量的影响较小.
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| 收稿时间： | 1985-08-31 |
| 修稿时间： | 1986-04-22 |
SELF-CONSISTENT CALCULATIONS OF ELECTRON STATES IN Si-nipi DOPING SUPERLATTICE |
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| WANG ENGE,HUANG HELUAN.SELF-CONSISTENT CALCULATIONS OF ELECTRON STATES IN Si-nipi DOPING SUPERLATTICE[J].Journal of Applied Sciences,1988,6(4):351-356. |
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| Authors: | WANG ENGE HUANG HELUAN |
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| Institution: | Liaoning University |
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| Abstract: | The electron states in Si-nipi doping superlattice have been calculated self-consistently by the local-density functional approximation. The rules of electron subband energies and corresponding wave functions depending upon free carrier concentration have been obtained. The excitation energies between the occupied and the nearest-neighbor unoccupied states-(01) subbands for low carrier concentrations are discussed. The forms of the electron density are described under the Hartree potential and fully self consistent potential. It is found that the influence of the free carrier exchange-correlation potential Vxc(z) on subband energies is small. |
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