| 红外光谱法检测LPE In_（1－x）Gal_xA syP_（1－y）晶体质量优劣的研究 |
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| 引用本文： | 刘益春,孙跃东,齐秀英.红外光谱法检测LPE In_（1－x）Gal_xA syP_（1－y）晶体质量优劣的研究[J].东北师大学报(自然科学版),1995(3). |
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| 作者姓名： | 刘益春 孙跃东 齐秀英 |
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| 作者单位： | 东北师范大学物理系 |
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| 摘 要： | 通过红外光谱检测ＬＰＥＩｎＧａＡｓＰ材料带边发光强度和光谱线型的空间分布检测材料带边辐射复合效率和均匀性，对引起光致发光强度衰减及半谱半宽度起伏的物理原因进行了分析，并同Ｘ－射线双晶衍射的测量结果进行了对比，二者具有很好的一致性．实验结果证明，光致发光方法是判断ＬＰＥ晶体质量简单而有效的方法．
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| 关 键 词： | 红外光谱，LPE，InGaAsP |
A Study on the Quality of LPE In_(1-x)Gal_xA syP_(1-y)Crystals by IR Photoluminscence Method |
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| Li Yichun,Sun Yaodong,Qi Xiuying.A Study on the Quality of LPE In_(1-x)Gal_xA syP_(1-y)Crystals by IR Photoluminscence Method[J].Journal of Northeast Normal University (Natural Science Edition),1995(3). |
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| Authors: | Li Yichun Sun Yaodong Qi Xiuying |
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| Abstract: | The IR PL method of checking.LPE InGaA sP materil band-band radiant recombination efficiency and material uniform are reported in this paper.The physics factors causing PL intensity decay and spectrum lineshape fluctuation are analysed.The results of X-ray double crystal diffraction are agreed with the results of IR photoluminscence. |
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| Keywords: | IR photo luminscence LPE InGaAsP |
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