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ZnO薄膜的制备和研究进展
引用本文:赵玉岭.ZnO薄膜的制备和研究进展[J].信阳师范学院学报(自然科学版),2005,18(3):344-345,361.
作者姓名:赵玉岭
作者单位:郑州师范高等专科学校物理系,河南郑州,450044
基金项目:河南省自然科学基金资助项目(0424220173)
摘    要:ZnO作为一种新型的宽禁带半导体材料,具有很好的化学稳定性和热稳定性,抗辐射损伤能力强,在光电器件、压电器件、表面声波器件等诸多领域有着很好的应用潜力.本文介绍了ZnO薄膜的基本性质以及喷雾热分解、脉冲激光沉积、金属有机物化学气相沉积等制备ZnO薄膜的技术和方法,并着重介绍了在ZnO紫外受激发射和p型掺杂等方面的研究进展.

关 键 词:ZnO薄膜  紫外受激发射  p型掺杂
文章编号:1003-0972(2005)03-0344-02
收稿时间:2005-03-18
修稿时间:2005-03-18

Recent advances and synthesis of ZnO thin films
ZHAO Yu-ling.Recent advances and synthesis of ZnO thin films[J].Journal of Xinyang Teachers College(Natural Science Edition),2005,18(3):344-345,361.
Authors:ZHAO Yu-ling
Abstract:ZnO is a novel material for wide band gap semiconductor, with good thermal and chemical stability and radiation resistance,and could be a good candidate for piezoelectric, photoelectric, and surface acoustic wave devices. In this paper, the properties of ZnO thin films and synthesize methods, such as thermal spray, pulsed laser deposition, and metal-organic chemical vapor deposition, are introduced. The progress in ultraviolet stimulated emission and p-type doping of ZnO are also discussed.
Keywords:ZnO thin  ultraviolet stimulated emission  p-type doping
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