| PECVD多晶硅膜的计算机模拟 |
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| 引用本文： | 徐静平,余岳辉,陈涛,彭昭廉.PECVD多晶硅膜的计算机模拟[J].华中科技大学学报(自然科学版),1993(5). |
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| 作者姓名： | 徐静平 余岳辉 陈涛 彭昭廉 |
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| 作者单位： | 华中理工大学固体电子学系
(徐静平,余岳辉,陈涛),华中理工大学固体电子学系(彭昭廉) |
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| 基金项目： | 湖北省自然科学基金资助项目 |
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| 摘 要： | 在LPCVD理论模型基础上,通过引进“电子温度”,对 PECVD多晶硅膜进行了计算机模拟分析.结果表明,射频功率和反应室气压是影响PECVD淀积速率分布的两个主要因素,且两者受p=kW线性关系的制约,即对于一定的射频功率,总可选择一合适的反应室气压,使淀积速率分布最佳.实验结果与理论分析相吻合.
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| 关 键 词： | 半导体 多晶硅膜 PECVD 计算机模拟 射频功率 反应气压 |
Computer Simulation of PECVD Polysilicon Films |
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| Xu Jingping Yu Yuehui Chen Tao Peng Zhaolian.Computer Simulation of PECVD Polysilicon Films[J].JOURNAL OF HUAZHONG UNIVERSITY OF SCIENCE AND TECHNOLOGY.NATURE SCIENCE,1993(5). |
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| Authors: | Xu Jingping Yu Yuehui Chen Tao Peng Zhaolian |
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| Institution: | Xu Jingping Yu Yuehui Chen Tao Peng Zhaolian |
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| Abstract: | Based on a theoretical model for LPCVD, computer simulation of PECVD polysilicon films has been performed by employing the concept of "electron temperature". Results show that the radio frequency power and the pressure in the reaction chamber are two main factors that affect the depositing rate distribution of PECVD and both are constrained by the linear relationship p = kW. For a given rf power, there always exists a suitable reaction chamber pressure under which the depositing rate distribution is optimum. Experimental results agree well with theoretical data. |
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| Keywords: | semiconductors polysilicon films PECVD computer simulation radio frequency power reaction pressure |
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