| LP-MOCVD生长InGaAlP外延层中In并入效率的研究 |
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| 引用本文： | 文尚胜,范广涵,廖常俊,刘颂豪.LP-MOCVD生长InGaAlP外延层中In并入效率的研究[J].华南理工大学学报(自然科学版),2001,29(8):45-48. |
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| 作者姓名： | 文尚胜 范广涵 廖常俊 刘颂豪 |
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| 作者单位： | 1. 华南理工大学应用物理系,
2. 华南师范大学MOCVD实验室, |
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| 摘 要： | 分析了In原子在InGaAlP外延生长表面的扩散、并及及脱附过程，给出了In并入外延层的效率表达式，依据该表达式，解释了生长速率、生长温度及生长压力等生长参数对LP－MOCVD生长InGaAlP外延层中In组分的影响。
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| 关 键 词： | 低压金属有机化合物气相外延 并入效率 In组分 LP－MOCVD InGaAlP |
| 文章编号： | 1000-565(2001)08-0045-04 |
| 修稿时间： | 2000年6月21日 |
Study on the In Incorporation Efficiency in LP-MOCVD Growth of InGaAlP |
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| Wen Shang_sheng,Fan Guang_han,Liao Chang_jun,Liu Song_hao.Study on the In Incorporation Efficiency in LP-MOCVD Growth of InGaAlP[J].Journal of South China University of Technology(Natural Science Edition),2001,29(8):45-48. |
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| Authors: | Wen Shang_sheng Fan Guang_han Liao Chang_jun Liu Song_hao |
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| Institution: | Wen Shang_sheng 1 Fan Guang_han 2 Liao Chang_jun 2 Liu Song_hao 2 |
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| Abstract: | In this paper, the diffusion process, the incorporation process and the adsorption process of In atom on the growth surface of InGaAlP have been analyzed. The In incorporation efficiency formula is presented. On the basis of this formula, the effects of the growth parameters, such as growth rate, temperature and gas pressure on the In composition of InGaAlP epitaxical layer are fully explained. |
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| Keywords: | LP_MOCVD incorporation efficiency In composition |
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