| Si+/As+双离子注入SI-GaAs对注入层电激活均匀性改善的研究 |
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| 引用本文： | 鲁光沅,刘福润,刘明成,赵杰,王永晨. Si+/As+双离子注入SI-GaAs对注入层电激活均匀性改善的研究[J]. 天津师范大学学报(自然科学版), 2000, 20(3) |
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| 作者姓名： | 鲁光沅 刘福润 刘明成 赵杰 王永晨 |
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| 作者单位： | 天津师范大学物理系,天津,300074 |
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| 基金项目： | 国家自然科学基金资助项目!(6 986 0 0 1)，天津市教委基金资助项目!(9710 9) |
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| 摘 要： | 研究了单 (Si )双 (Si / As )离子注入半绝缘砷化镓 (SI-Ga As)电激活的均匀性 .结果表明 ,L ECSi-Ga As衬底中深电子陷阱能级 (EL 2 )均匀性分布好坏 ,对注入层电激活性有一定影响 .当 SI-Ga As中碳含量小于 5× 1 0 15cm- 3时 ,对注入层电激活影响不大 .采用多重能量 Si 注入 ,可改善栽流子纵向分布的均匀性 ,采用 Si / As 双离子注入可改善 L EC SI-Ga As衬底中 EL 2横向不均匀分布对电激活均匀性的影响 ,可获得注入层横向的电激活 .
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| 关 键 词： | 离子注入 半绝缘GaAs 电激活均匀性 EL2能级 |
A Study of the Active Uniformity for SI-GaAs by Si+/As+ Dual Ion Implantation |
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| LU Guang-yuan,LIU Fu-run,LIU Ming-cheng,ZHAO Jie,WANG Yong-chen. A Study of the Active Uniformity for SI-GaAs by Si+/As+ Dual Ion Implantation[J]. Journal of Tianjin Normal University(Natural Science Edition), 2000, 20(3) |
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| Authors: | LU Guang-yuan LIU Fu-run LIU Ming-cheng ZHAO Jie WANG Yong-chen |
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| Abstract: | The active uniformity of SI GaAs by Si /As implantation was studied. The results showed that the EL2 distribution in LEC SI GaAs affects the active uniformity, whereas the influence is little if the content of carbon is less than 5*10 15 cm -3 . The uniformity in depth is improved by various energy implantation. Dual ion implantation can improve the uniformity caused by the EL2 distribution in LEC SI GaAs substrate. |
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| Keywords: | implantation SI GaAs active uniformity EL2 energy |
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