| Research and Making of a High-Power Switching Supply Using Pulse Width Modulation |
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| 作者姓名： | 焦斌 |
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| 作者单位： | Shanghai Dian Ji University, Shanghai 200240 |
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| 摘 要： | Compared with the traditional SCR phase-shift regulated power supply, a new type of power semiconductor , noncrystalline state magnetic material and pulse width modulation technology, high-power switching supply has many advantages： small volume, high converting efficiency, good dynamic performance, small harmonic componont and small pollution to AC supply.
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| 关 键 词： | IGBT 高功率开关电源 脉冲宽度调制 功率半导体器件 |
| 收稿时间： | 2005-01-18 |
Research and Making of a High-Power Switching Supply Using Pulse Width Modulation |
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| JIAO Bin.Research and Making of a High-Power Switching Supply Using Pulse Width Modulation[J].Journal of Donghua University,2005,22(2):87-89. |
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| Authors: | JIAO Bin |
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| Abstract: | Compared with the traditional SCR phase-shift regulated power supply, a new type of power semiconductor ,non-crystalline state magnetic material and pulse width modulation technology, high- power switching supply has many advantages: small volume, high converting efficiency, good dynamic performance, small harmonic component and small pollution to AC supply. |
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| Keywords: | IGBT pulse width modulation switching supply |
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