| 正装连续工作的GaAs/GaAlAs阶梯衬底内条形激光器 |
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| 引用本文： | 马骁宇,邹峥,杜国同,高鼎三.正装连续工作的GaAs/GaAlAs阶梯衬底内条形激光器[J].吉林大学学报(理学版),1988(4). |
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| 作者姓名： | 马骁宇 邹峥 杜国同 高鼎三 |
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| 作者单位： | 吉林大学电子科学系
(马骁宇，邹峥，杜国同)，吉林大学电子科学系(高鼎三) |
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| 摘 要： | 本文报道了一种工艺简单、特性优良、可正装连续工作的半导体激光器——阶梯衬底内条形激光器,这种结构激光器由一次液相外延完成电流隔离层和四层双异质结构生长,电流通路在外延过程中自然形成,目前得到了正装室温连续激射,阈值为30～50mA的器件,其线性光输出和基横模工作范围达2倍阈值以上。
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| 关 键 词： | 阶梯衬底 内条形 半导体激光器 一次液相外延 |
CW Terraced Substrate Inner Stripe Lasers with Epitaxial Layers up Setting |
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| Ma Xiaoyu,Zhou Zheng,Du Guotong and Gao Dingsan.CW Terraced Substrate Inner Stripe Lasers with Epitaxial Layers up Setting[J].Journal of Jilin University: Sci Ed,1988(4). |
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| Authors: | Ma Xiaoyu Zhou Zheng Du Guotong and Gao Dingsan |
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| Abstract: | One kind of new structure GaAs/AlGaAs CW DH Laser,terraced substrate inner stripe(TSIS)laser,was designed and demonstrated. In this structure device, only one step of liquor phase epitaxy(LPE) prosces is nescesary to build up double heterojunction with current blocking layer, current channel, and index waveguide layers. The CW threshold current of this TSIS lasers with epitaxial layers up setting are between 30 to 50 mA at room temperature, Linear laser output and single mode behaviour can be performed at twice threshold current. |
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| Keywords: | terraced substrate inner stripe semiconductor laser one step of liquid phase epitaxy |
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