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Te掺杂ZnSe/[(CdSe)_l(ZnSe)_3]_m超晶格荧光光谱
引用本文:胡湘威,汪河洲,郑锡光,赵福利,徐耕.Te掺杂ZnSe/[(CdSe)_l(ZnSe)_3]_m超晶格荧光光谱[J].中山大学学报(自然科学版),1997(5).
作者姓名:胡湘威  汪河洲  郑锡光  赵福利  徐耕
作者单位:中山大学超快速激光光谱学国家重点实验室/物理学系
基金项目:国家自然科学基金,广东省自然科学基金,中山大学前沿课题基金
摘    要:对垒区Te掺杂浓度不同的ZnSe/[(CdSe)1(ZnSe)3]m短周期超晶格量子阱的稳态和瞬态荧光进行了实验研究,通过不同激发强度下逐级饱和过程测得ZnSe垒区自由激子寿命为35ps,[(CdSe)1(ZnSe)3]7阱区自由激子寿命为177ps,束缚在不同n值的Ten束缚激子的复合寿命为0.5~10ns.揭示了Te掺杂浓度对能量传递、荧光波长和荧光寿命的灵敏的影响及其规律.

关 键 词:激子,超晶格,时间分辨荧光光谱

Photoluminiscence Spectra of Te Doped ZnSe/ [(CdSe) 1 (ZnSe) 3] m Superlattice
Hu XiangweiSchool of Physics and Engneering,Zhongshan University,Guangzhou Wang Hezhou Zheng Xiguang Zhao Fuli Xu Geng.Photoluminiscence Spectra of Te Doped ZnSe/ [(CdSe) 1 (ZnSe) 3] m Superlattice[J].Acta Scientiarum Naturalium Universitatis Sunyatseni,1997(5).
Authors:Hu XiangweiSchool of Physics and Engneering  Zhongshan University  Guangzhou Wang Hezhou Zheng Xiguang Zhao Fuli Xu Geng
Institution:Hu XiangweiSchool of Physics and Engneering,Zhongshan University,Guangzhou 510275 Wang Hezhou Zheng Xiguang Zhao Fuli Xu Geng
Abstract:Excitation density dependent and time resolved photoluminescence of barrier Te doped ZnSe/(CdSe) 1(ZnSe) 3] m short period superlattice multiple quantum wells with different Te concentration are studied at 77 K. The experimental results show that the lifetime of free exciton in ZnSe barrier region is 35 ps, the lifetime of the free exciton in quantum well region is 177 ps and the lifetimes of the bound excitons traped in(Te) n clusters with different n value vary from 0.5 to 10 ns. This work reveals that the spectra, the dynamics of excitonic photoluminescence and energy transfer depend sensitively on Te concentration.
Keywords:exciton  superlattice  time  resolved photoluminiscence spectroscopy
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