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高功率半导体激光器的电噪声
引用本文:石英学,王雪丹,石家纬,李靖,郭树旭. 高功率半导体激光器的电噪声[J]. 吉林大学学报(理学版), 2005, 43(3): 354-357
作者姓名:石英学  王雪丹  石家纬  李靖  郭树旭
作者单位:集成光电子学国家重点联合实验室,吉林大学试验区,长春,130012;集成光电子学国家重点联合实验室,吉林大学试验区,长春,130012;集成光电子学国家重点联合实验室,吉林大学试验区,长春,130012;集成光电子学国家重点联合实验室,吉林大学试验区,长春,130012;集成光电子学国家重点联合实验室,吉林大学试验区,长春,130012
基金项目:国家自然科学基金(批准号: 60471009 ),吉林省自然科学基金 (批准号: 20020634 ),吉林省科技项目基金 (批准号:20040301 4)
摘    要:对高功率量子阱半导体激光器的爆破噪声和可能来自相同缺陷源的产生复合噪声(g-r噪声)进行了研究. 实验结果表明, 如果老化电流远高于阈值电流Ith, 爆破噪声和g-r噪声将会被引入, 甚至会出现多重g-r噪声. 通过对比样品老化前后光电导数的特征参量发现, 老化后产生爆破噪声和g-r噪声的器件为失效器件, 表明高功率量子阱半导体激光器在使用和老化过程中有时会伴有爆破噪声和g-r噪声. 通过缺陷能级理论和p-n结势垒高度变化, 讨论了爆破噪声、 g-r噪声及多重g-r噪声产生的原因.

关 键 词:电噪声  半导体激光器  可靠性
文章编号:1671-5489(2005)03-0354-04
收稿时间:2004-05-10
修稿时间:2004-05-10

The Electric Noise of High-power Semiconductor Laser
SHI Ying-xue,Wang Xue-dan,SHI Jia-wei,LI Jing,GUO Shu-Xu. The Electric Noise of High-power Semiconductor Laser[J]. Journal of Jilin University: Sci Ed, 2005, 43(3): 354-357
Authors:SHI Ying-xue  Wang Xue-dan  SHI Jia-wei  LI Jing  GUO Shu-Xu
Affiliation:Department of Electronics Engineering, National Integrated Optoelectronics Laboratory, Jilin University, Changchun 130012, China
Abstract:The burst and g-r (generation-recombination) noise in high-power quantum well semiconductor lasers were studied theoretically and experimentally. The results indicate that they are related with the aging current. Maybe they come from the same defects source. If the aging current is much larger than the threshold current I_ th , the burst noise and the g-r noise will be induced, even multi-g-r noise appears. By comparing the characteristic parameters of optic and electric derivative curves before and after aging, it is discovered that the device which produces burst and g-r noise after aging is failure device. The reasons of producing burst, g-r noise and multi-g-r noise are discussed on the basis of the theory of the defect energy level E_t and the variation of the height of the potential barrier of p-n junction.
Keywords:electrical noise  semiconductor laser  reliability
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