| 未掺杂SI-GaAs退火行为的正电子湮没研究 |
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| 引用本文： | 吴凤美,滕敏康,沈德熏,陈岭.未掺杂SI-GaAs退火行为的正电子湮没研究[J].南京大学学报(自然科学版),1990(1). |
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| 作者姓名： | 吴凤美 滕敏康 沈德熏 陈岭 |
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| 作者单位： | 南京大学物理系，南京大学物理系，南京大学物理系，南京大学物理系 |
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| 摘 要： | 用正电子湮没技术,研究了未掺杂的SI-GaAs退火行为。结果表明,长寿命分量τ_2的变化不仅与镓空位而且和多镓空位络合物有关。本文还讨论了电子和中子辐照的影响。
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| 关 键 词： | 正电子湮没 未掺杂 SI-GaAs 辐照 |
A STUDY OF THE POSITRON ANNIHILATION OF THE ANNEDLING BEHAVIORS IN UNDOPED SI-GaAs |
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| Wu Fengmei Deng Minkang Sen Dexun Cheng Ling.A STUDY OF THE POSITRON ANNIHILATION OF THE ANNEDLING BEHAVIORS IN UNDOPED SI-GaAs[J].Journal of Nanjing University: Nat Sci Ed,1990(1). |
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| Authors: | Wu Fengmei Deng Minkang Sen Dexun Cheng Ling |
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| Institution: | Department of Physics |
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| Abstract: | Using the positron annihilation technique,the annealing behaviors in undoped SI-GaAs have been studied.The results show that the changes in the long lifetimc com- poncnt i_2 are related to the both Ga-vacancy and multi-Ga-vacancy complex.The in- fluence of electron and neutron irradiations has also been discussed in this paper. |
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| Keywords: | positron annihilation undoped SI-GaAs Irradiation |
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