ZnO纳米线阵列的生长机制

通过化学气相沉积方法在Si衬底上制备了规则排列的ZnO纳米线阵列．利用扫描电子显微镜观察了合成的氧化锌纳米结构的形貌，表明当In在前驱物中引入超过0．3g时，在Si衬底上合成的纳米结构都是纳米线阵列；高分辨透射电子显微镜图像、x射线图谱和x射线能谱均表明合成的ZnO纳米线阵列具有纤锌矿结构，择优沿（001）方向生长．提出了在Si衬底上生长ZnO纳米线阵列的机制．

The Growth Mechanism of ZnO Nanowire Arrays

Well- aligned ZnO nanowire arrays have been successfully synthesaze（1 on ~1 ~, luv） suostrate mruuB. ehemieal vapor deposition method. The morphologies were observed by scanning electron microscopy, indica- ting that when the content of In is more than or equals 0.3 g, ZnO nanowire arrays on a Si substrate were observed. High - resolution transmission electron microscopy image, X - ray diffraction pattern and X - ray ener dispersive spectrum indicate that the as -synthesized ZnO nanowire arrays have a wurtzite structure, grow preferentially along （001） direction. The growth mechanism of ZnO nanowire arrays on Si （100） substrate was proposed in this paper.