静压下ZnSe/Zn1-xCdxSe应变异质结中电子的本征态

运用三角势近似且计入电子向势垒的隧穿,通过数值计算方法求解定态薛定谔方程,研究流体静压力影响下有限深势垒ZnSe/Zn1-xCdxSe应变异质结中电子的本征态问题,讨论了其基态、第一激发态和第二激发态本征能量及相应的各级本征函数,同时与无应变的情形进行了比较分析.数值计算结果表明,应变使电子的能级降低,能级间距减小,且导致波函数的隧穿几率增加.静压效应显著降低能级和能级间距.因此,讨论电子在应变型异质结构中的散射问题时,需要计入材料间由于晶格不匹配而产生的应变效应的影响.

Eigenfunctions of an Electron in a ZnSe/Zn1-xCdxSe Strained Heterojunction under Hydrostatic Pressure

The eigenvalues of the electron and its corresponding eigenfunctions in a ZnSe/Zn1-xCdxSe strained heterojunction with a finite barrier under hydrostatic pressure are obtained by solving the stationary Schrodinger equation. The triangle potential approximation model is adopted and the electronic penetrating into the barrier is also taken into account to discuss the ground, first excited, second excited states of the electron and the corresponding eigenfunctions. The numerical results with and without strained effect are compared and analyzed. It is shown that the strain lowers the electronic eigen-energy levels and decreases the seperations between the energy-levels, and also enhances the penetration probability of eigenfunctions. The hydrostatic pressure effect is more obvious to decrease the electronic eigen-energy levels and the seperations between the energylevels. Thus, it indicates that the biaxial strain effect needs to be considered when one discusses the scattering problem of an electron in a strained heterojunction.