Photoconductive study and carrier dynamics
of vertically aligned GaAs nanowires |
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Authors: | Hui Xi Bimu Yao Zhenyu Lu Pingping Chen and Tianxin Li |
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Institution: | Hui Xia,Bimu Yao,Zhenyu Lu,Pingping Chen,Tianxin Li National Laboratory for Infrared Physics,Shanghai Institute of Technical Physics,Chinese Academy of Sciences,500 YuTian Road,Shanghai 200083,People’s Republic of China |
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Abstract: | Single wire devices are generally fabricated to study the electrical and photoelectric behaviors
of semiconductor nanowires (NWs); however detriment or contamination can hardly be avoided during
manipulation of NWs under focused ion and electron beams. This could not be a trivial factor for III-V
NWs which are candidates for high efficiency solar energy harvesting and sensitive photodetection. In this
study an alternative way to probe the photoconductive property of individual epitaxial GaAs NWs is
presented. For the sample preparation, a uniform spin-coated layer of polymer was selected to be the
supporting medium for the vertically aligned NWs structure; then the adequate thinning and polishing of
the sample exposed the NW tip and also achieved the required height of NW. An external power
adjustable laser was introduced as the excitation source, and the dark and photoconductive currentvoltage
properties of individual NW were measured by the conductive atomic force microscopy. The
typical Schottky style photoconductive behavior was observed in the vertically aligned GaAs NW, and its
photoresponsivity has been found to be much higher than that of the reported for single NW
photodetector. Finally, a numerical model based on the experimental setup was established to simulate
the photoelectric behavior of individual NW. The minority hole lifetime has been found to dominate the
photoconductive current-voltage properties of NW under the positive sample bias, and can be derived
from the quantitative fitting of experimental photo-IV curves. |
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Keywords: | GaAs nanowire Photoconductive property Minority carrier lifetime |
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